半导体激光照射预防正畸微种植体周围炎的临床研究

Study of Semiconductor laser irradiation on preventing Peri-implantitis

目的:探讨半导体激光照射预防正畸微种植体周围炎的临床效果。方法:采用随机对照原则选择80例患者分成实验组和对照组,各40例,均选择双侧上颌第二前磨牙和第一磨牙牙根之间颊侧牙槽骨植入微种植体。术后实验组采用半导体激光照射微种植体周围组织:术后第一周每侧照射10min,每日一次,连续七天;术后第二周起每3天照射一次,直至取下微种植体;并作规范化健康教育。对照组仅做规范化健康教育。于术后第7天、1月、3月评价实验组和对照组微种植体菌斑指数、种植体体周软组织指数,记录微种植体周围炎例数、种植体松动例数。结果:术后第7天、1月、3月实验组菌斑指数和体周软组织指数均低于对照组,实验组发生微种植体周围炎和微种植体松动例数低于对照组,P均<0.05,差异具有统计学意义。结论:半导体激光结合规范健康教育可有效预防正畸微种植体周围炎,值得临床推广。

Objective： To survey the effect of semiconductor laser irradiation on preventing peri-implantitis. Method： 80 patients with micro-impant,on blateral maxillary second premolar buccal between the root and first molar,were divided into experimental group and control group by randomized controlled principle. In experimental group,the patients were taken specification health education and irradiated semiconductor laser on micro tissue around the implant for 10 minutes with laser oral therapy once a day for 7 consecutive days after surgery and twice a week since the second week to taken off the microimplants.the patints of control group were taken specification health education and no semiconductor laser irradiation. we observed the change of microt- inflammation around the number of cases,MIA（ Micro implant） loosening number of cases,PLI（ plaque index）,and STI（ soft tissue index） on 7days,1 month,3month after operation. Result： On 7days,1month,3month after operation,it could be foumd that PLI and STI of experimental group were reduced to compare control group,the cases of loosening and microt-inflammationalso were reduce. Difference between two groups were obvious,（ P〈0. 05）.Conclusion： It is demonstrated that semiconductor laser irradiation is useful for preventing per-implantitis after surgery and it deserved to be promoted.