980nm高功率锥形激光器巴条的制备及光电特性

Fabrication and Electro-Optic Properties of 980 nm High-Power Tapered Laser Bar

采用InGaAs/AlGaAs外延材料体系,设计和制作了980 nm高功率锥形半导体激光器巴条阵列。该锥形半导体激光器巴条的总长为10 mm,腔长为3 mm。对该巴条器件以及巴条上面的单芯片进行了一系列的光电性能测试,实验结果表明,巴条器件的阈值电流为10 A,斜率效率为0.8 W/A,最大转化效率为40%。在80 A电流下,巴条的输出功率可达55.6 W。发光点测试结果表明,巴条上面的20个单芯片全部激射出光。单芯片的光电测试结果表明,单管器件的阈值电流为0.5 A,最大光电转化效率为51%。在10 A电流时,单管器件的输出功率达7 W。连续光功率为5 W时,慢轴远场半峰全宽发散角为4.9°,光束质量传播因子M^2为4.6。

A 980 nm high-power tapered laser bar array is designed and fabricated based on the In Ga As/Al Ga As epitaxial material system. The whole length of the tapered laser bar is 10 mm with a cavity length of 3 mm. A series of electro-optic property tests are carried out on both the laser bar and the laser chip. The results show that the threshold current of the laser bar is 10 A with a slope efficiency of 0.8 W/A. The maximum conversion efficiency of the laser bar is 40%. A 55.6 W output power of the laser bar is obtained when the current is 80 A. The results of the emission point tests indicate that the twenty single chips of the laser bar are all activated. The test results of the electro-optic property of the laser chip show that the threshold current of the laser chip is 0.5 A with the maximum conversion efficiency of 51%. A 7 W output power of the laser chip can be obtained when the current is 10 A. The full width at half maximum of far-field divergence in the slow axis is 4.9° with a beam propagation factor M2 of 4.6 at the5 W output power.