商用0.18μm CMOS工艺抗总剂量辐射性能研究

Study of Commercial 0.18μm CMOS Total Ionizing Dose Effects

对国内标准商用0.18μm工艺MOSFET和电路进行总剂量效应研究。其STI隔离区域二氧化硅在总剂量达到50k rad(Si)时,端口3.3 V NMOS晶体管漏电达到了10-9A级,达到100k rad(Si)以上时,内核1.8 V NMOS晶体管出现场区漏电。通过电路总剂量辐照试验,表明NMOS晶体管是薄弱点。需要开发STI场区总剂量加固技术,以满足抗辐射电路研制要求。

The paper focused on the total ionizing dose effects of commercial fabrication process MOSFETs and circuits. When irradiation runs up to 50k rad （Si）, The STI oxide traps a large number of positive charges. It leads IO NMOSFETs＇ leakage currents reach nanoamps. When irradiation runs up to 100k rad （Si）, Core NMOSFETs leakage currents become obviously. The IO NMOSFETs are vulnerable. The STI oxide needs radiation hard to meet radiation-hardened circuits manufacture.