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X频段FET混频器的仿真设计 被引量:1

Simulation and design of X-band FET drain mixer
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摘要 主要研究X频段下变频场效应管(FET)混频器的设计与仿真,利用谐波平衡法和变换矩阵法对FET漏极混频器的工作原理进行分析,根据设计要求选取合适的FET管,运用先进设计系统(A D S)软件对电路进行设计、仿真优化和加工测试。测试结果表明,在射频频率为12.3 GHz^13.2 GHz,中频频率为1.6 GHz^2.5 GHz时,变频损耗小于5 d B。 The simulation and design of X-band down-converter Field Effect Transistor(FET) mixer is presented. The basic principle of FET drain mixer is analyzed by the harmonic balance method and the transform matrix method. How to choose the appropriate FET transistor is based on the requirement for design. The circuit is designed,simulated and optimized with Advanced Design System(ADS) software. With Radio Frequency(RF) of 12.3 GHz-13.2 GHz and Intermediate Frequency(IF) of 1.6 GHz-2.5 GHz,the conversion loss is less than 5 d B.
作者 王鹏
出处 《太赫兹科学与电子信息学报》 2016年第2期233-235,共3页 Journal of Terahertz Science and Electronic Information Technology
关键词 场效应管混频器 谐波平衡法 变换矩阵法 Field Effect Transistor drain mixer harmonic balance method transform matrix method
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