一种适用于SoC的瞬态增强型线性稳压器

A Transient Response Enhanced LDO for SoC

为满足SoC系统负载快速变化的要求,提出了一种新型摆率增强型片上LDO系统。通过增加有效的内部检测电路,使LDO的功率管栅极电压可以快速地响应输出负载跳变,提高电路响应速度。采用中芯国际40nm CMOS工艺模型,对电路进行仿真。仿真结果表明,当LDO的负载电流以100mA/μs跳变时,电路的最大上冲电压为110mV,下冲电压为230mV,恢复时间分别为1.45μs和1.6μs。同时,在2V电源电压下,电路的静态电流只有42μA。

In order to meet the requirement of swift load change in SoC,a novel capacitorless LDO with a new kind of slew-rate enhanced circuit was presented.An extra part of circuit was added to sense the change of output voltage efficiently,which could make the power transistor’s gate voltage change along swiftly,and had speeded up the transient response in a great extent.The circuit was simulated in the SMIC 40 nm CMOS process.Simulation results showed that the proposed circuit had an overshoot of only 110 mV and an undershoot of 230 mV when the current load changed at a speed of 100 mA/μs.The recovery times were 1.45 μs and 1.6 μs respectively.Meanwhile,its quiescent current was only 42μA at a power supply of 2V.