Au掺杂花状In_2O_3微结构的制备及其气敏特性研究

Fabrication and sensing properties of Au-doped flower-like In_2O_3 microstructures

采用水热法制备了不同浓度(0%,1%,3%和5%(摩尔分数))Au掺杂的花状In_2O_3微结构。利用X射线衍射仪(XRD)、X射线能谱分析仪(EDS)和扫描电子显微镜(SEM)对合成的In_2O_3的晶相、成分和微观形貌进行表征与分析。分析结果表明,制备的花状微结构的平均粒径约4μm,花状纳米片的厚度约为25nm。同时,对制备的Au掺杂In_2O_3气体传感器的气敏特性进行了研究,实验结果表明,在最佳工作温度(250℃)条件下,3%(摩尔分数)Au掺杂In_2O_3气体传感器对100×10-6丙酮气体的灵敏度达到23.1,响应时间和恢复时间分别为10和13s。最后对Au掺杂In_2O_3的气敏机理进行了分析。

In this paper, the different concentrations of Au-doped （0 molG, 1 molG, 3 molG and 5 molG）flower-like Ine 03 microstructures have been synthesized by hydrothermal method. The crystal phase, composi-tion and morphology of the as-prepared In2 03 microstructures were investigated by X-ray diffraction （XRD）,energy dispersive spectroscopy （EDS） and scanning electron microscope （SEM）. The results exhibit that the av-erage diameter of the flower-like microstructure reaches to 4/xm, and the measured thickness of the nanosheetis only 25 nm. Meanwhile, the gas sensing experiments were carried out on the fabricated Au-doped In2O3 gassensors. The measured results show that the sensitivity of 3 molG Au-doped In203 gas sensor can reach to 23.1at the optimum operating temperature （250 ℃） to 100× 10^-6 acetone, and the response/recovery times are 10and 13 s, respectively. At last, the gas sensing mechanism of Au-doped In2O3 gas sensor was discussed.