基于不同衬底的五氧化二钒薄膜光电特性

Optical and Electrical Properties of Vanadium Pentoxide Films Deposited on Different Substrates

利用射频磁控溅射方法,在红外石英、蓝宝石和光学单晶金刚石上制备了氧化钒薄膜,然后对其结构与厚度、表面形貌、电学及光学性能进行了表征。实验结果表明,制备出的薄膜均为单一组分的V_2O_5薄膜,在(001)面有明显的择优取向,单晶金刚石衬底的薄膜结晶度和表面形貌最好;电学性能方面,金刚石衬底的薄膜相变温度最低经历的温度范围也最小,电学突变性能最为优异;光学性能方面,蓝宝石和金刚石衬底的薄膜光关闭时间均非常短,低于2.5 ms,回复时间在30 ms左右;单晶金刚石衬底的薄膜相变前后透射率比值为10.3,表现出了非常显著的光学突变性能。

Vanadium oxide films （V2O5） are deposited on the substrates of infrared quartz, sapphire and single- crystal diamond respectively by radio freguency （RF） reactive magnetron sputtering. The structure, thickness, surface morphology, electrical and optical performances of the films are studied. The results indicate that all the deposited films are polycrystalline V205 films with preferred orientation along （001） plane. The crystallization behavior and the surface topography are the best when the substrate is single-crystal diamond, the phase-transition temperature and the temperature range are the lowest simultaneously. In terms of the optical performance, the optical-shutting time of the films on sapphire and diamond is less than 2.5 ms and the recovery time is about 30 ms. The prominent optical-mutation property is presented on the single-crystal diamond, with the transmittance ratio before and after the phase transition of 10.3.