摘要
The fluorescence of graphene oxide quantum dots （GOQDs） that are infiltrated into porous silicon （PSi） is investigated. By dropping activated GOQDs solution onto silanized PSi samples, GOQDs are successfully in- filtrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-inflltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.
The fluorescence of graphene oxide quantum dots （GOQDs） that are infiltrated into porous silicon （PSi） is investigated. By dropping activated GOQDs solution onto silanized PSi samples, GOQDs are successfully in- filtrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-inflltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.
基金
supported by the National Natural Science Foundation of China(Nos.61575168 and 61265009)
the Xinjiang Science and Technology Project(No.201412112)
