期刊文献+

三管燃烧器在生长室内燃烧特性的数值模拟 被引量:1

Simulation of Combustion Characteristics of Three-tube Burner in Growth Chamber
原文传递
导出
摘要 通过研究三管燃烧器在生长室内的燃烧特性,分析了喷嘴结构对燃烧特性的影响。结果表明:H_2从喷嘴流出后,由于内O_2与外O_2的作用,在中心和近壁面处产生两股火焰。外O_2和H_2吹入深度接近,相互扩散明显,燃烧反应完全,生长室的氧化气氛主要通过内O_2实现。晶体熔帽所受压力主要来自于中心气流的作用,熔帽中心受到最大的压应力作用,而在晶体熔帽边缘附近,气流对熔体产生的压力为拉应力。喷嘴内O_2孔径对晶体熔帽表面温度和压力的影响比较明显,而外O_2环直径的影响很小,H_2环直径对熔帽温度影响较大,对压力的影响很小。 Combustion characteristics of three-tube burner in growth chamber for the preparation of single crystal by a flame fusion method were investigated. The effect of nozzle structure on the combustion characteristics was analyzed. The results show that hydrogen flowed out from the nozzle diffuses with inner and outer oxygen, and two flames occur in the center and near the wall of growth chamber. The blowing depth of hydrogen is closed to outer oxygen, and the combustion reaction of hydrogen and oxygen is complete due to the significant mutual diffusion. The oxidizing atmosphere appears mainly by inner oxygen in growth chamber. The pressure of the molten cap of crystal is mainly derived from the central oxygen flow, and the maximal pressure of center and edge of molten cap is compressive and tensile. The inner oxygen aperture has an effect on the surface temperature and pressure of the molten cap of crystal but the outer oxygen diameter has a slight effect on the surface temperature and pressure of the molten cap of crystal. The diameter of hydrogen ring has an effect on the temperature of molten cap, but has a slight effect on the pressure.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2016年第5期686-692,共7页 Journal of The Chinese Ceramic Society
基金 国家自然科学基金资助项目(No.51472047)
关键词 焰熔法 生长室 燃烧特性 数值模拟 flame fusion method growth chamber combustion characteristics numerical simulation
  • 相关文献

参考文献16

  • 1SCHEEL H J. Crystal growth technology CGT for energy: saving energy and renewable energy [J]. J. Cryst Growth, 2005, 275: 331–337.
  • 2SCHEEL H J Historical aspects of crystal growth technology[J]. J Cryst Growth, 2000, 211: 1–12.
  • 3SHUICHI Kawaminami, KEISUKE Mochizuki, SHINOBU Hashimoto, et al. Coloration of Ti-doped sapphire grown by the Flame-Fusion Method[J]. J Asian Ceram Soc, 2013, 1(4): 362–367.
  • 4BI Xiaoguo, LIU Xudong, NIU Wei. Flame-fusion growth of rutile single crystal[J]. Adv Mater Res, 2012, 535-537: 2571–2575.
  • 5DONNET J B, OULANTI H, LE HUU T, et al. Sythesis of large crystal diamond using combustion-flame method[J]. Carbon, 2006, 44(2): 374–380.
  • 6毕孝国,修稚萌,马伟民,孙旭东.金红石(TiO_2)单晶体的生长研究[J].东北大学学报(自然科学版),2004,25(10):977-979. 被引量:17
  • 7毕孝国,修稚萌,马伟民,孙旭东,赵洪生,郭国友,付杰,丁千.生长气氛和速度在金红石(TiO_2)单晶体生长中的作用研究(英文)[J].人工晶体学报,2004,33(4):657-661. 被引量:11
  • 8毕孝国,修稚萌,孙旭东,赵洪生,曹忠杰,郭国有,肖继田.大尺寸金红石(TiO_2)单晶体生长条件的实验研究[J].人工晶体学报,2004,33(2):244-249. 被引量:18
  • 9SCHEEL H J, CAPPER P. Crystal Growth Technology: Chapter 16 Flame-Fusion (Verneuil) Growth of Oxides[M]. John Wiley & Sons, Ltd, 2008, Nov. 25.
  • 10ZHOU Wenping, LIU Xudong, NIU Wei, et al. Problems and Solutions during the Growth of LSO Single Crystal with Czochralski Method[C]. International Conference on Mechatronics, Electronic, Industrial and Control Engineering, 2014, 12: 1535–1538.

二级参考文献45

  • 1毕孝国,修稚萌,马伟民,孙旭东.金红石(TiO_2)单晶体的生长研究[J].东北大学学报(自然科学版),2004,25(10):977-979. 被引量:17
  • 2毕孝国,修稚萌,马伟民,孙旭东,赵洪生,郭国友,付杰,丁千.生长气氛和速度在金红石(TiO_2)单晶体生长中的作用研究(英文)[J].人工晶体学报,2004,33(4):657-661. 被引量:11
  • 3[1]Rutie-Optical Grade TiO2 Single crystal [EB/OL]. http://www.mticrystal.com, 2004-02-02.
  • 4[2]Mikio Higuchi, et al. Floating-zone Growth of Rutile Single Crystals Inclined at 48℃ to the c-axis[J]. Journal of Crystal Growth, 2000,208:501-507.
  • 5[3]Kazuhito Hatta, Mikio Higuchi, Junichi Takahashi, Kohei Kodaria. Floating-zone Growth and Characterization of Aluminum-doped Rutile Single Crystals [J]. Journal of Crystal Growth,1996,163:279-284.
  • 6[4]Mikio Higuchi, Kohei Kodaria. Effect of ZrO2 Addition on FZ Growth of Rutile Single Crystal[J]. Journal of Crystal Growth,1992,123:495-499.
  • 7[5]Mikio Higuchi, et al. Effects of Sc2O3 Addition on Floating Zone Growth of Rutille Single Crystals[J]. Journal of Crystal Growth,1992,125:571-575.
  • 8[6]Mikio Higuchi, et al. Growth of Rutile Single Crystals by Floating Zone Method[J]. Journal of Crystal Growth,1991,112:354-358.
  • 9[7]Hagfeldt A, Siegbahn H, Lindguist S, Lunell S. Semiempirical Calculations of TiO2(rutile) Cluster[J]. International Journal of Quantum Chemistry,1992,44:477-495.
  • 10[8]Zhang Ke-chong. Modern Crystallography Base[M]. Beijing: Science Press,1987-10(in Chinese).

共引文献23

同被引文献2

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部