摘要
Y99-61590-95 0001361在具有薄隧道氧化物的快闪存储器中小泄漏电流的详细观察=Detailed observation of small leak current inflash memories with thin tunnel oxides[会,英]/Manabe,Y.& Okuyama,K.//1998 IEEE International Confer-ence on Microelectronic Test Structures.—95～99(AZ)Y99-61590-113 0001362采用单元阵列应力测试(CAST)结构的快闪存储器单元的新特征分析方法论=New characterization method-ology for flash memory cell using CAST structure [会,英]/Fan,M.& Liu,U.C.//1998 IEEE InternationalConference on Microelectronic Test Structures.
出处
《电子科技文摘》
2000年第1期124-125,共2页
Sci.& Tech.Abstract
