摘要
Y2000-62210-237 00129070.2到6μm GaInAs/InP 电子波导的加工和特性=Fabrication and characterization of 0.2 to 6μm GaInAs/InP electron waveguides[会,英]/Maximov.I.&Wang,Q.//Proceedings of 11th International Confer-ence on Indium Phosphide and Related Materials.—237~240(UC)
出处
《电子科技文摘》
2000年第8期47-47,共1页
Sci.& Tech.Abstract