摘要
Y2000-62067-434 0014495用于异质结双极晶体管的金属有机气相外延生长GaAs,GaInP 的表面形态学=Surface morphology ofmetalorganic vapor phase epitaxy grown GaAs.GaInP forheterojunction bipolar transistor applications with Nitro-gen as the carriergas[会,英]/Hsu,C.C.& Xu,J.B.//1998 IEEE International Conference on Optoelec-tronic and Microelectronic Materials and Devices.—434～437(EC)Y2000-62264-20 0014496正脉冲电晕放电过程废气清洗说明=Demonstration offlue gas cleaning by positive pulsed corona discharge pro-
出处
《电子科技文摘》
2000年第9期35-35,共1页
Sci.& Tech.Abstract
