摘要
Y2000-62067-442 0016169用于低功率、高性能处理机核的砷化镓技术=Galliumarsenide technology for low-power high performanceprocessor cores[会,英]/Lachowicz,S.W.& Eshraghi-an,K.//1998 IEEE International Confefence on Phto-electronic and Microelectronic Materials and Devices.—442～445(EC)Y2000-62067-454 0016170高势垒栅与三步掺杂沟道晶体管=A high-barriergate and Tri-step doped channel transistor[会,英]/Liu,W.C.& Pan,H.J.//1998 IEEE InternationalConference on Phtoelectronic and Microelectronle Materi-als and Devices.—454～456(EC)Y2000-62067-486 0016171迢低混乱度量子点接触与量子线中的相关电子现象=Correlated electron phencmena in
出处
《电子科技文摘》
2000年第10期23-24,共2页
Sci.& Tech.Abstract
