摘要
Y2000-62185-9 0100370EKC265 处理寿命及衬垫上氟与碳的玷污=A study onEKC265 bath life and Fluorine & carbon contaminationon bond pads[会,英]/An.L.H.& Lai.K.K.//1998IEEE International Conference on Semiconductor Elec-tronics.—9～12(EC)Y2000-62185-80 0100371硅片背面薄膜对快速热氧化(RTO)生长的影响=Theeffect of backside films on rapid thermal oxidation(RTO)growth on silicon wafers[会,英]/Omar,A.B.
出处
《电子科技文摘》
2001年第1期32-33,共2页
Sci.& Tech.Abstract
