摘要
Y2000-62474—731 0101959超薄氧化物中的低压隧道效应:界面态与衰降监视器=Low voltage tunneling in ultra-thin oxides:a monitorfor interface states and degradation[会,英]/Ghetti,A.& Sangiorgi,E.//1999 IEEE International Electron De-vices Meeting.—731～734(PC)Y2000-62185-179 0101960镉砷化物薄膜器件的介质击穿和电沉淀现象=Dielec-tric breakdown and electrofoming phenomenon in thecadmium Arsenide thin films devices[会,英]/Din,M.B.H.& Gould,R.D.//1998 IEEE International Con-ference on Semiconductor Electronics.—179～183(E)
出处
《电子科技文摘》
2001年第2期16-17,共2页
Sci.& Tech.Abstract
