摘要
Y2000-62422-110 0103560应力控制多孔硅中的水喷注分裂现象=ELTRAN bywater-jet splitting in stress-controlled porous Si[会,英]/Sakaguchi,K.& Yanagita,K.//1999 IEEE Interna-tional SOI Conference Proceedings.—110～111(EC)Y2000-62422-119 0103561ITOX-SIMOX 硅片顶端薄硅层栅极氧化物的完整性=Integrity of the gate oxide on the thin top Si layer in I-TOX-SIMOX wafers[会,英]/Nakashima,S.& Ko-date,J.//1999 IEEE International SOI Conference Pro-ceedings.—119～120(EC)Y2000-62422-121 0103562有图案的绝缘体上硅材料缺陷分析=Defect analysis ofpatterned SOI material[会,英]/Bagchi,S.& Yu,Y.//1999 IEEE International SOI Conference Proceed-ings.—121～122(EC)
出处
《电子科技文摘》
2001年第3期7-7,共1页
Sci.& Tech.Abstract
