气体放电等离子体(DPP)极紫外光源研究进展

The recent progress of discharge produced plasma extreme ultraviolet source

极紫外光刻技术被认为是下一代最有潜力的光刻技术,对推动集成电路发展具有重要作用。极紫外光源是极紫外光刻技术的源头,其技术水平直接制约了光刻技术的发展。气体放电等离子体极紫外光源结构简单,转换效率高,适合大规模工业应用,具备良好的应用前景。现有气体放电等离子体光源包括毛细管放电等离子体极紫外光源、激光辅助等离子体极紫外光源、等离子聚焦极紫外光源和中空阴极管放电等离子体极紫外光源等。近年来,极紫外光光刻技术工业化进展较快,该文对气体放电等离子体技术做了综述,掌握最新研究进展有助于推动我国相关领域研究。

Extreme ultraviolet lithography（ EUVL） is regarded as the most promising lithography technique in the next generation,which plays an important role in promoting the development of integrated circuit industry. Extreme ultraviolet（ EUV） source is the fundamental of the EUVL,and its technical level confines the EUVL development. Discharge produced plasma（ DPP） EUV source characterized by simple structure,high conversion efficiency which is suitable for large-scale commerce application and it has a bright applied prospect. Currently,DPP EUV source included capillary discharge EUV source,laser assisted discharge produced plasma EUV source,dense plasma focus EUV source and hollow cathode triggered plasma pinch EUV source,etc. In recent years,EUVL has been in the rapid industrialization process. The overview of DPP source and the recent progress could accelerate the development in related fields of our country.