脉冲激光沉积法制备ZnSnO_3薄膜

Preparation of ZnSnO_3 thin films by pulsed laser deposition

采用脉冲激光沉积法(PLD),在Pt/Ti/SiO_2/Si衬底上制备LiNbO_3型ZnSnO_3薄膜。通过改变生长过程中的氧气压、生长温度等实验条件,研究制备薄膜的最佳工艺参数。利用X射线衍射仪(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)对薄膜进行分析。研究表明,在Pt/Ti/SiO_2/Si衬底上制备ZnSnO_3薄膜优化条件是氧气压30 Pa、沉积温度600℃,并使用ZnO作为缓冲层。优化条件下制备的ZnSnO_3薄膜有良好的(006)取向,与ZnSnO_3单晶衍射峰位置一致。

The LiNbO3 type ZnSnO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition（PLD）. The films were fabricated under different oxygen partial pressures and temperatures respectively to study theoptimized experiment parameters. The films were characterized by X-ray diffraction （XRD）, scanning electron microscope（SEM） and atomic force microscope （AFM）. The results show that, the optimized conditions for the preparation of ZnSnO3thin films on Pt/Ti/SiO2/Si substrates are the oxygen pressure of 30 Pa, the deposition temperature of 600 ℃, and using ZnOas buffer layer. On the optimized conditions, the films show good （006） orientation, which is same to the monocrystalZnSnO3.