低温CMOS－器件物理和互连特性

Low-Temperature CMOS-Device Physics and Interconnection Properties

本文概述低温ＣＭＯＳ的器件物理及其中的互连特性。详细分析了ＭＯＳ结构中载流的冻析效应，低温迁移率和漂移速度，并讨论了ＭＯＳ器件的低温阈值特性。对低温下多晶硅和ＴｉＳｉ２等互连以及金一半欧姆接触特性，也作了扼要讨论。本文的结果和结论对于优化低温ＣＭＯＳ结构和器件参数具有一定的参考价值。

The device physics and the electric properties of interconnections of low-temperatureCMOS structures as well as low-temperature MOS threshold characteristics are discussed.The proper-ties of the metal-semiconductor ohm contacts and interconnections such as polysilicon and TiSi2 arebriefly introduced.Some of the results and conclusions presented in this paper could be served as usefulguidance for optimized design of low-temperature CMOS structures and device parameters.