计算机模拟InGaSb/GaAs薄膜外延生长的研究

Study on Computer Simulation MBE InGaSb/GaAs Growth

该文采用动力学蒙特卡罗(KMC)方法模拟了InGaSb薄膜由2D到3D的外延生长过程,观察到明显的岛状生长过程,并且发现从网络结构的形成到衬底被完全覆盖,岛的接连处曲率不断变大,由此可见实际岛接连处的应变的增加导致了化学势的变化,进一步促使质量的变差,并对表面形貌产生影响。

The Kinetic Monte Carlo method based on a solid-on-solid model has been introduced to simulate the InGaSb heteroepitaxial growth, which observed from the KMC simulation clearly. From the 2D and 3D images, it’s visible that, after the appearence of InGaSb network the strain of surface trough increase with the coalescence of neighboring islands, which induced the increment of the chemical potential accordingly. This change resulted in the chemical potential controled diffusive mass transport upward along the surface and the formation of the undulation on the surface gradually. The morphology of the epilayer is affected by the undulation significantly.