深亚微米MOS晶体管直流模型关键参数的研究

The Key Parameters Research on the Deep Sub-micron MOS Transistor DC Model

MOS3模型对于沟道长度在1微米的器件的数字分析有良好的适用性,但随着集成电路工艺的不断发展,MOSFET沟道长度进一步减小,生产工艺也发生了变化。在深亚微米的短沟道工艺下,原有的MOS3直流模型已不能有效地反映出MOSFET的直流特性了。该文在不考虑器件结构和物理工作特性的情况下,只对沟道中间低掺杂区域做模型,找出深亚微米MOS静态管直流模型的关键参数,并提出对关键参数进行修正的方法。

MOS3 model is well applicable for the analysis of 1 um channel length device,but with the continuous development of integrated circuit technology,channel length further reduced,the production technology has also changed.In the deep submicron process,the MOS3 DC model has not effectively reflects the DC characteristics of MOSFET.Here we do not consider the structure and physical device working characteristics,only for the middle low doped area,find out the key parameters of DC model,and puts forward the key parameters of correction method.