摘要
Growing graphene on gallium nitride （GaN） at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830℃ was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.
Growing graphene on gallium nitride （GaN） at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830℃ was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.
