X波段12W GaAs功率放大器MMIC

X-Band 12W GaAs Power Amplifier MMIC

基于0.25μm Ga As赝配高电子迁移率晶体管（PHEMT）工艺研制了一款可工作在脉冲和连续波条件下的X波段高性能大功率放大器（HPA）。根据Ga As材料的导热特性和热分布特点,设计了能够在连续波条件下工作的功率器件,并提取了器件的EEHEMT可定标模型参数。HPA原理图设计采用低损耗高效率母线拓扑结构,并基于最优效率原则优化了HPA各级阻抗匹配参数。对HPA容易出现的几种稳定性问题进行了分析,并在设计过程中采取了相应的防范措施。采用电磁场仿真技术优化设计的HPA芯片尺寸为3.5 mm×4.0 mm。在栅源电压为-0.7 V,漏源电压为8 V,工作频率为9～10 GHz的条件下,连续波输出功率达到12 W以上,功率附加效率大于45%,在9.6 GHz时功率附加效率达到50%。

A X-band high performance high-power amplifier（ HPA） for pulse and CW operation was developed based on 0. 25 μm Ga As pseudomorphic high electron mobility transistor（ PHEMT） process was developed. Based on the characteristics of the thermal conduction and heat distributing of Ga As,the power devices operated under continuous wave（ CW） were designed,and the parameters of a scalable EEHEMT model were extracted. In the HPA schematic diagram design,a low loss and high efficiency bus-bar topology was developed,and the parameters for impedance matching of each stage were optimized based on the optimal efficiency principle. Several stability problems of HPA were analyzed and preventive measures were adopted in the design process. The layout was optimized using EM simulation. The chip size is3. 5 mm × 4. 0 mm. The HPA was tested under gate-source voltage of- 0. 7 V,drain-source voltage of8 V and the frequency range of 9 GHz to 10 GHz,its output power is more than 12 W in CW mode with a power added efficiency above 45% and 50% at 9. 6 GHz.