X波段SiGe BiCMOS功率放大器设计

Design of X-Band Power Amplifier Based on SiGeBi CMOS Process

采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8-12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。

Based on the 0. 13 μm Si Ge bipolar CMOS（ Bi CMOS） process, an X band power amplifier chip was designed. Using the cascode circuit structure and the active linearization bias circuit,the circuit voltage withstand value and the maximum output power of the power amplifier were improved.By the two-stage cascode amplifier,inter-stage and output matching networks,the gain and work band of the amplifier were enhanced. The reliability of the power amplifier circuit was improved using the layout of dissymmetrical power amplifier transistor and ballasting resistance. The measurements indicate that in the frequency rang of 8- 12 GHz,the return loss is less than- 10 d B,the small signal gain is larger than 30 d B,the output power at 1 d B compression point is 16 d Bm,the saturation power is larger than19 d Bm and its peak saturation power add efficiency is larger than 18%. The amplifier works in class AB region,the power supply is 5 V and the static current is 80 m A, and the die area is 1. 22 mm ×0. 73 mm.