双靶反应共溅射制备WC薄膜及其电催化性能

Dual-target Magnetron Sputtered Tungsten Carbide Thin Films and Their Electrocatalytic Activity

以金属钨靶和石墨靶反应共溅射的方法,在硅片上制备碳化钨薄膜。实验探究了功率和衬底温度对薄膜成分、质量的影响。研究表明,衬底温度为400℃时,薄膜生长致密、均匀,无裂痕;当钨靶功率为55 W,逐渐增大石墨靶功率时,薄膜成分分别为W、W_2C、WC_(1-x)。经电化学研究发现W_2C、WC_(1-x)两种薄膜均对甲醇有电催化作用,且有很高的比表面积,面积为1 cm^2的W_2C、WC_(1-x)薄膜电极对应的比表面积分别为33.32 cm2和64.68 cm2。

Tungsten carbide thin films were prepared by dual-target magnetron sputtering deposition using pure tungsten target and carbon target. The influence of the substrate temperatures and the sputtering power of carbon target was studied. The results show that the suitable temperature of sputtering the tungsten carbide was 400 ℃. When the sputtering power of W target is 55 W,the XRD result indicates that the different thin films of W,W2C,WC1-x were obtained. Electrochemical investigations show that W2C,WC1-x both exhibited electro catalytic activity in the reaction of methanol oxidation and had a large real surface area. The real surface area of 1 cm^2W2C and WC1-x thin films were 33. 32 cm^2 and 64. 68cm^2,respectively.