SiCl_4浓度对微晶硅薄膜生长及光电特性的影响

Effects of SiCl_4 Concentration on the Growth and Photoelectric Properties of Microcrystalline Silicon Thin Films

研究了SiCl_4浓度对等离子体增强化学气相沉积(PECVD)系统中以SiCl_4/H_2为反应气体的微晶硅薄膜生长及光电特性的影响。结果表明,微晶硅薄膜的沉积速率和晶化率均随SiCl_4浓度的增加而增大,而晶粒平均尺寸在SiCl_4浓度小于65%时呈增大趋势,在SiCl_4浓度大于65%时呈减小趋势;此外,光照实验表明制备的微晶硅薄膜具有较稳定的微观结构,具有类稳恒光电导效应,且样品的电导率依赖于SiCl_4浓度的变化。此外,还讨论了Cl基基团在微晶硅薄膜生长过程中所起的作用。

The effects of SiCl4 concentration on the growth and photoelectric properties of the microcrystalline silicon films using SiCl4/ H2 as the reaction gases in the plasma enhanced chemical vapor deposition（ PECVD）system were investigated. The results show that the deposition rate and the crystallization rate of microcrystalline silicon films increase as SiCl4 concentration increasing. The average grain size increases when SiCl4 concentration is less than 65%,while it decreases when SiCl4 concentration is greater than 65%. In addition,the light experimental results show that the microcrystalline silicon films have more stable microstructure and has a kind of persistent photoconductivity effect. The conductivity of the samples is dependent on the concentration of SiCl4.The role of Cl radical on the growth process of microcrystalline silicon thin films was also discussed.