晶硅掺镓抑制太阳电池光致衰减效应的研究

Investigation on Supression of Light Induced Degradation Effect in Crystalline Silicon Solar Cells with Gallium Doping

采用掺镓晶硅和掺硼晶硅制备的寿命片和太阳电池片分别进行光致衰减实验,用WT-2000少子寿命测试仪和Halm电池电学性能测试仪等研究了它们受光照前后少子寿命和电学性能的变化。发现掺镓单晶寿命片的少子寿命衰减率比掺硼单晶寿命片低50%左右,掺镓单晶PERC电池和掺镓多晶常规电池转换效率的衰减率比掺硼单晶PERC电池和掺硼多晶常规电池分别降低3.41%和0.92%。这些结果表明晶硅太阳电池的光致衰减效应主要是晶硅中少子寿命降低导致的,晶硅掺镓后能有效抑制太阳电池的光致衰减现象。

Gallium doped crystalline silicon and boron doped crystal silicon were used to prepare corresponding minority carrier lifetime samples and solar cells. The lifetime and electrical property change of those samples after illumination were studied by using the WT-2000 lifetime tester and the Halm electrical properties tester. The results showed that the lifetime decay ratio of the gallium doped sc-Si is reduced by50% than that of conventional boron doped sc-Si. It was also demonstrated that the decay ratios of the gallium doped sc-Si PERC cells and gallium doped mc-Si cells is 3. 41% and 0. 92% lower than those of boron doped sc-Si PERC cells and mc-Si cells. It is concluded that the LID effect is caused by the decrease of the lifetime in crystalline silicon,and the effect can be effectively suppressed by gallium doping.