摘要
采用离子注入的方法,将钴离子(Co)直接注入到氧化铟锡(ITO)导电玻璃电极表面,制得纳米钴修饰电极(Co/ITO)。通过循环伏安法(CV)、X-射线光电子能谱法(XPS)以及扫描电子显微镜(SEM)等方法对纳米钴修饰电极表面进行了表征。以Co/ITO为工作电极,在0.1 mol L-1Na OH溶液中,峰电流与谷胱甘肽(GSH)浓度在1.0×10-7mol·L-1~2.0×10-6mol·L-1之间呈线性关系,检出限为1.0×10-7mol·L-1。纳米钴修饰电极还体现了良好的稳定性和重现性,可用于实际样品中谷胱甘肽的检测。
In this paper, the ion implantation method, the ions of cobalt (Co) directly into indium tin oxide (ITO) conduc- tive glass electrode surface, to obtain nanometer cobalt modified electrode (Co/ITO). By cyclic voltammetry (CV), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) and other metheds for nano-cobah modified electrodes, glutathione (GSH) in 0.1 mol L-1 NaOH solution, showing a pair of good redox peaks, peak current and the concentration of glutathione in 1.0× 10-7 mol. L-1 2.0× 10-6 mol. L-1 showed a linear relationship between the detection limit of 1.0× 10-7 mol. L-1. Nano-cobah modified electrode also reflects good stability and reproducibility, with some selectivity in real samples.
出处
《福建分析测试》
CAS
2016年第3期7-13,共7页
Fujian Analysis & Testing
关键词
纳米钴
离子注入
修饰电极
谷胱甘肽
Cobalt nanopartiele
Ion implantation
modified electrode
Glutathione