高温退火对掺磷氮化硅钝化性能的影响

Effect of High Temperature Annealing on the Passivation of Phosphorus-doped Silicon Nitride

为了深入了解掺磷氮化硅的性质,以便更好地将其应用于太阳能电池,本文研究了高温退火（300~700℃）对掺磷氮化硅在p型硅上面的钝化性能的影响.实验结果显示,高温退火后,掺磷氮化硅钝化的p型硅样品的有效少子寿命发生了严重衰减现象.这表明高温退火削弱了掺磷氮化硅对p型硅的钝化性能.K中心的讨论和高频电压-电容曲线的分析结果表明,高温区掺磷氮化硅对p型硅的钝化性能减弱主要是由正的固定电荷数量增多引起的.

In order to further understand the properties of phosphorus-doped silicon nitride （P-doped SiN. ）, so as to better apply it to solar cells, the effect of high temperature annealing （300-700 ℃） on the passivation properties of P-doped SiN. for p-type silicon nitride was studied in this paper.The experimental results showed that the effective minority carrier lifetime of silicon samples with P-doped SiN. was severely reduced after high temperature annealing, which indicates that the high temperature annealing can deteri- orate the passivation property of this thin film on p-type Si.The analysis results of K centers and high frequency capacitance-voltage curves show that the deterioration of the film passivation performance is mainly caused by the increase of positive fixed charges.