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金属/La_2O_3/Si结构电流机制研究 被引量：1

The Current Leakage Mechanism of Metal/La_2O_3/Si Structures
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摘要 La_2O_3是一种高k栅介质材料。本文采磁控溅射方法制备了硅基La_2O_3薄膜,用热蒸发法在薄膜表面分别制备了Al和Pt电极,采用电流-电压法研究了上述金属/La_2O_3/Si结构的漏电流机制。研究发现,在常温下,金属/La_2O_3/Si结构的主要漏电流机制是由FP发射所支配。在液氮温度下,对于Al/La_2O_3/Si结构,不管是正向偏压还是反向偏压,在高场下,曲线很好地满足FN隧穿的线性关系。从这些电流特性,得到了金属/La_2O_3与La_2O_3/Si的能带偏移。 La2O3 is a high-k dielectric material. In this research, we deposited La2O3 films on silicon substrates by radio frequency magnetron sputtering, and deposited A1 and Pt electrodes on the La2O3 films by thermal evaporation. The current leakage mechanism of the fabricated metal/La2O3/Si structures were studied by current-voltage method. It was found that, at room temperature, the main current leakage mechanism of metal/La2O3/Si structure was dominated by FP emission; while at liquid nitrogen temperature, the I-V results at high electric field fit the FN tunneling relationship very well no matter at forward or reverse bias. From these I-V results, the energy band offsets for metal /La2O3 and La2O3、Si were obtained.
作者 仇庆林 朱燕艳 方泽波
机构地区 上海电力学院 绍兴文理学院
出处 《真空电子技术》 2016年第2期18-22,26,共6页 Vacuum Electronics
关键词 高K栅介质 漏电流 能带结构 High-k gate dielectric, Current leakage, Energy band structure
分类号 O485 [理学—固体物理]
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参考文献11

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真空电子技术
2016年 第2期

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