智能电网用高功率密度1500A/3300V绝缘栅双极晶体管模块

High Power Density 1 500A/3 300V Insulated Gate Bipolar Transistor Module for Smart Grid Application

基于双扩散金属氧化物半导体(diffused metal-oxide semiconductor,DMOS)元胞设计技术,针对智能电网的需求,引入"电子注入增强"以及台面栅技术,优化了3 300 V绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)芯片的整体性能。基于该芯片制造出的1 500 A/3 300 V高功率密度IGBT模块,相对于优化前其额定电流从1 200 A上升到了1 500 A(上升了25%),同时导通压降从2.8 V下降到了2.4 V(下降了14%),最高工作结温从125℃提升到150℃。反偏安全工作区(reverse biased safe operation area,RBSOA)与短路安全工作区(short-circuit safe operation area,SCSOA)测试显示,该模块能在集电极电压为2 000 V的情况下关断3 000 A的电流,并且在栅电压为15 V、集电极电压为2 000 V的短路条件下的安全工作时间超过10?s。测试结果显示,该模块导通压降及开关损耗性能与同类型国际主流产品相当。

In order to meet the demand of the smart grid,electron injection enhanced and terrace gate technology were introduced in the double diffused metal-oxide semiconductor（DMOS） cell design to improve the overall performance of 3 300 V IGBT chip and 1 500 A/3 300 V IGBT module was manufactured based on this chip.Compared to the prior module,the rated current rises from 1 200 A to 1 500 A（25% increased）.Meanwhile,the saturation voltage drops from 2.8 V to 2.4 V（14% decreased）.Moreover,the maximum operation temperature also rises from 125 ℃ to 150 ℃.The test results of reverse biased safe operation area（RBSOA） and short-circuit safe operation area（SCSOA） show that the module can turn off a current of 3 000 A under a line voltage of 2 000 V and the short-circuit time is over 10 ？s under a 15 V gate voltage and a 2 000 V line voltage.Besides,test results show that its saturation voltage and switching loss are as good as the similar international mainstream products.