期刊文献+

基于隧穿二极管的集约三值全加器设计

Design of a RTD-Based Compact Ternary Full Adder
下载PDF
导出
摘要 多值逻辑(MVL)相对二值逻辑具有更高的逻辑密度,可以相对简单的结构承载更多的信息,是一条值得探索的提升电路信息处理能力的途径。以共振隧穿二极管(RTD)为主要器件,设计了一种带有进位信号的集约三值全加器电路。不同于传统的设计方法,该设计结合进位信号的逻辑特点和RTD电路的特性,使用较少的器件实现了逻辑功能,极大地降低了电路的复杂度,适应于大规模MVL电路的设计。该设计弥补了MVL电路在功能级上的空缺,丰富了MVL电路的类型,对今后基于MVL发展更复杂的电路系统打下了基础。 Compared with the two-valued logic,the multi-valued logic(MVL) has higher logical density and can contain more information with the simpler structure,which is a worthy exploring method for improving the information processing capacity of circuits.A compact ternary full adder circuit with the carry signal was designed with the resonant tunneling diode(RTD) as a major device.Different from the conventional design method,this design combines the logical characteristics of the carry signal and the properties of the RTD circuit to realize the logic function with fewer devices and dramatically reduce the complexity of the circuit,which is suitable for the design of large scale MVL circuits.This design fills the gap of functional MVL circuits,extends the types of MVL circuits and provides the foundation for developing complex circuit systems based on the MVL.
出处 《微纳电子技术》 北大核心 2016年第6期353-359,共7页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(61404094 61574102) 湖北省科技支撑计划资助项目(2015CFB536) 江苏省自然科学基金资助项目(BK20141218) 中国博士后科学基金资助项目(2012T50688)
关键词 多值逻辑(MVL) 共振隧穿二极管(RTD) 门电路 三值或非门 三值全加器 multi-valued logic(MVL) resonant tunneling diode(RTD) gate circuit ternary NOR gate ternary full adder
  • 相关文献

参考文献12

  • 1COMPANO R,MOLENKAMP L,PAUL D J.Technology roadmap for nanoelectronics,eurapean commission IST programme:future and emerging technolgies[EB/OL].(1999-09-22)[2016-01-20].http://nanworld.org/Nanolibrary/nanoroad.pdf.
  • 2郭维廉.共振隧穿器件概述——共振隧穿器件讲座(1)[J].微纳电子技术,2005,42(9):398-404. 被引量:6
  • 3NUNEZ J,QUINTANA J M,AVEDILLO M J.Holding preserving in RTD-based multiple-valued quantizers[C]//Proceedings of the 7thIEEE Conference on Nanotechnology.Hong Kong,China,2007:611-615.
  • 4LIN M,ZHANG H P,SUN L L.Testability design of multi-valued RTD circuits[C]//Proceedings of 2011 International Conference on Electronics,Communications and Control(ICECC).Ningbo,China,2011:510-513.
  • 5BEREZOWSKI K S,VRUDHULA S B K.Multiple-valued logic circuits design using negative differential resistance devices[C]//Proceedings of the 37thInternational Symposium on Multiple-Valued Logic.Oslo,Norway,2007:24.
  • 6韦一,沈继忠.一种共振隧穿二极管三值逻辑电路设计方法[J].山东大学学报(工学版),2013,43(3):94-98. 被引量:1
  • 7BHATTACHARYA M,MAZUMDER P.Augmentation of SPICE for simulation of circuits containing resonant tunneling diodes[J].IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,2001,20(1):39-50.
  • 8SCHULMAN J N,de los SANTOS H J,CHOW D H.Physics-based RTD current-voltage equation[J].IEEE Electron Device Letters,1996,17(5):220-222.
  • 9NUNEZ J,QUINTANA J M,AVEDILLO M J.Correct DC operation in RTD-based ternary inverters[C]//Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems.Bangkok,Thailand,2007:860-865.
  • 10WAHO T,CHEN K J,YAMAMOTO M.A novel multiple-valued logic gate using resonant tunneling devices[J].IEEE Electron Device Letters,1996,17(5):223-225.

二级参考文献54

  • 1Haddad G I, Mazumder P. Solid-state electronics [J], 1997, 41(1): 1515.
  • 2Akeyoshi T, Meazawa K et al. 1993 International conference on solid state devices and materials, 1993, 1077.
  • 3GUO W L, NIU P J, LIANG H L. 2001 6th international conference on solid-state and integrated circuit technology proceedings,2001, 1403.
  • 4LURYT S. Frequency limit of double barrier resonant tunneling oscillators [J] . Appl Phys Lett, 1985, 47: 490.
  • 5TSUCHIYA M, SAKAKI H, YOSHINO J, et al. Room temperature observation of differential negative resistance in an AlAs/GaAs/AlAs resonant tunneling diode [J] . Japanese Journal of Applied Physics, 1985, 24: L466.
  • 6BOUREGBA R, VANBESIEN O, MOUNAIX P, et al. Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths [J] . IEEE Transantions on Microwave Theory and Techniques, 1993, 41: 2025.
  • 7TOM P E, BROEKAERT, LEE WAI, et al. Pseudomotphic In0.53Ga0.47As/AlAs/ InAs resonant tunneling diodes with peakto-valley current ratios of 30 at room temperature [J] . Appl Phys Lett, 1988, 53: 1545.
  • 8SZE S M. Physics of semiconductor devices [M] . John Wiley d Sons. 1981, 533.
  • 9SHIMIZU N, NAGATSUMA T, SHINAGAWA M, et al. Picosecond-switching time of In0.53Ga0.47As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique [J] .IEEE Electron Device Letters, 1995, 16: 262.
  • 10SOLLNER T C L G, GOODHUE W D, TANNENWALD C D,et al. Resonant tunneling through quantum wells at frequencies up to 2.STHz [J] . Appl Phys Lett, 1983, 43: 588.

共引文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部