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0.20mm CGO硅钢高温退火Goss晶粒起源及异常长大行为研究 被引量:5

Origination and Abnormal Growth Behavior of Goss Grains During High Temperature Annealing Process of 0.20mm CGO Silicon Steel
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摘要 利用X射线衍射织构分析技术和电子背散射衍射微织构分析技术,对0.20mm CGO硅钢薄板在高温退火缓慢升温过程中表层和次表层的织构演变规律进行了研究。结果表明:0.20mm CGO硅钢在高温退火过程中经历了低温回复、初次再结晶、初次再结晶晶粒长大和二次再结晶形成最终锋锐Goss织构的演变过程。Goss取向晶粒最初起源于变形回复基体中残存于{111}〈112〉形变带上少量的Goss晶粒亚结构,600℃保温2h后,Goss取向晶粒率先从变形基体中转变形核,在随后的升温过程中逐渐发生再结晶,Goss取向晶粒在此过程中并不具有尺寸优势,700℃时初次再结晶完成,基体中以γ纤维织构和{112}〈110〉织构为主;随着退火温度的升高,Goss晶粒的含量和平均晶粒尺寸逐渐增加,在900-1000℃之间,Goss取向晶粒迅速"吞噬"其他取向晶粒形成锋锐的Goss织构,1000℃时已经发生了二次再结晶。 Texture evolution in surface layer and subsurface layer during high temperature annealing process of 0.20mm CGO silicon steel was analyzed by X-ray diffraction (XRD) texture analysis tech- nique and electron back-scattered diffraction (EBSD) micro-texture analysis technique. The results in- dicate that 0. 20mm CGO silicon steel experiences low-temperature recovery, primary recrystalliza- tion, recrystallized grain growth, and secondary recrystallization process, finally forms sharp Goss texture. Goss oriented grains originate from the Goss grain sub-structure residues in {111} (112) de- formation bands of recovery matrix initially, after 2h thermal insulation at 600℃, Goss grain nuclea- tion occurs in the deformation matrix in the first place, then recrystallizes gradually in the following heating process, Goss oriented grains do not have the size advantage in this process, primary recrys- tallization finishes at 700℃, 3' fiber texture and {112} (110) are the major texture components in the matrix. With the increase of annealing temperature, the content and average grain size of Goss oriented grains are improved gradually. At 900-1000℃, Goss grains grow up rapidly and sharp Goss texture is formed by swallowing other oriented grains, secondary recrystallization has taken place at 1000℃.
出处 《材料工程》 EI CAS CSCD 北大核心 2016年第5期1-7,共7页 Journal of Materials Engineering
基金 中央高校基本科研业务费专项资金资助项目(FRF-TP-15-063A3)
关键词 硅钢 退火 高斯织构 再结晶 silicon steel annealing Goss texture recrystallization
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