基于金刚石的GaN基微波功率器件研究进展

Research progress of diamond-based GaN microwave power electronic devices

金刚石在目前所知的天然物质中具有最高的热导率,在高频、大功率GaN基高电子迁移率晶体管(HEMT)和电路的散热方面极有应用潜力。综述化学气相沉积多晶金刚石衬底的衬底转移技术、单晶金刚石衬底的直接外延技术和纳米金刚石表面覆膜的器件工艺技术在GaN基HEMT器件中的应用研究和发展历程,并分析每种技术的优缺点。

Diamond has the highest thermal conductivity in the present natural materials,which has great potential to solve the heat dissipation problems for the high frequency,high power GaN based HEMT devices and circuits.The research developments of the three technologies of integrating diamond into GaN based HEMTs are reviewed,which are about chemical vapor deposition（CVD）diamond substrate transfer technique,AlGaN/GaN heterostructures directly grown on single-crystal diamond substrate,and the technology of nanocrystallline diamond layers on the top of AlGaN/GaN HEMTs.The advantages and disadvantages of these technologies are also analyzed.