摘要
报道了激射波长为2.1μm的Ga In Sb/Al Ga As Sb双量子阱激光器。通过优化外延结构设计和欧姆接触,无镀膜的宽条激光器达到了9.8%的峰值功率转换效率,这比原来的值提高了1.5倍,室温下得到了615 m W的连续激射功率输出和1.5 W的脉冲激射功率输出。这些激光器的阈值电流密度低至126 A/cm2,斜率效率高达0.3 W/A。通过测试不同腔长的激光器,测得内损耗和内量子效率分别为6 cm-1和75.5%,均比原有器件有很大提升。激光器在连续工作3 000 h后,功率没有明显下降。
2.1 μm Ga In Sb/Al Ga As Sb double quantum well lasers were reported. With optimization of epitaxial design and ohmic contact, these uncoated broad-area lasers exhibited a maximum power conversion efficiency of 9.8% which was 1.5 times greater than previous value, a room temperature continuous wave output power of 615 m W and a pulsed wave output power of 1.5 W were achieved. The threshold current density of these lasers was as low as 126 A/cm2, and the slope efficiency was as high as0.3 W/A. By testing lasers with different cavity lengths, the internal loss and the internal quantum efficiency were measured as 6 cm-1and 75.5%, respectively, which were all improved compared with previous device. The output power of laser diode operated in CW mode shows no apparent degradation after 3 000 h.
出处
《红外与激光工程》
EI
CSCD
北大核心
2016年第5期58-62,共5页
Infrared and Laser Engineering
基金
国家重点基础研究发展计划(2011CBA00608
2012CB619203)
国家科技重大专项计划项目(2011ZX01015-001)
国家自然科学基金(61036010
61177070
U1431231)
北京市自然科学基金(4112058)
