一种NiO薄膜的新型制备方法及其应用

A New Method to Fabricate NiO Thin Films and Its Application

利用热氧化法,在紫外线光源催化作用下,在N型硅衬底上沉积氧化镍(NiO)薄膜,制备具有半导体特性的NiO/Si异质结二极管。使用JASCO NRS-3100测量薄膜拉曼散射频谱,分析不同氧化时间、不同紫外线光源、不同退火条件对NiO薄膜性能的影响。实验结果表明:氧化时间为60 min时,金属Ni能够充分氧化;含臭氧水银灯比金属卤化物灯更有助于金属Ni的氧化反应;氮气下退火30 min,有助于消除晶格损伤,改善薄膜特性。通过Phillips X'Pert衍射仪分析NiO薄膜的晶体结构,Keysight B1500A半导体参数测量仪测量NiO/Si二极管的I-V特性,当二极管两端电压分别为2 V和-2 V时,电流密度相差3个数量级,表现出良好的整流特性。

Thin films of NiO were deposited on silicon substrates by thermal oxidation with ultraviolet（UV） light as catalyst. In this way a NiO/Si heterojunction diode was fabricated. With the variation of oxidation time, UV lamps, and annealing conditions, the Raman spectroscopy of different NiO thin films were analyzed using JASCO NRS-3100. The results show that when the oxidation time is 60 min, metallic Ni can be completely oxidized and that the oxidation rate of Hg-ozone lamp is higher than that of Metal-halide lamp. Also annealing in nitrogen for 30 min after oxidation contributes to eliminating lattice damage, thus improving the properties of NiO thin films. X-ray diffraction was carried out to study the crystallinity using a Phillips X’Pert diffractometer. The I-V characteristic of the NiO/Si diode was measured by Keysight B1500 A semiconductor tester. The current densities at 2 V and-2 V were different by three orders of magnitude, showing good rectification.