摘要
The SnS thin films were synthesized by chemical bath deposition （CBD）, dip coating and successive ionic layer adsorption and reaction （SILAR） techniques. In them, the CBD thin films were deposited at two tem- peratures： ambient and 70℃. The energy dispersive analysis of X-rays （EDAX）, X-ray diffraction （XRD）, Raman spectroscopy, scanning electron microscopy （SEM） and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.
The SnS thin films were synthesized by chemical bath deposition （CBD）, dip coating and successive ionic layer adsorption and reaction （SILAR） techniques. In them, the CBD thin films were deposited at two tem- peratures： ambient and 70℃. The energy dispersive analysis of X-rays （EDAX）, X-ray diffraction （XRD）, Raman spectroscopy, scanning electron microscopy （SEM） and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.
基金
the Department of Atomic Energy (DAE)–BRNS,Mumbai,India for providing financial assistance through DAE-BRNS Major Research Project (No. 2010/34/34/BRNS/2060) dated 13th December 2010 for carrying out this research
