摘要
Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CHaNH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy （AFM） and scanning electron microscopy （SEM）. The photoelectric properties of the CHaNHaPbIa/p-Si heterojunction are studied by testing the current-voltage （I-V） with and with- out illumination and capacitance-voltage （C-V） characteristics. It turns out from the I-V curve without illumina- tion that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of 4-5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current （I sc） of 0.16 #A and an open circuit voltage （Voc） of about 10 mV. The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor （MIS） structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This paral- lel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3Pbl3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated.
Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CHaNH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy （AFM） and scanning electron microscopy （SEM）. The photoelectric properties of the CHaNHaPbIa/p-Si heterojunction are studied by testing the current-voltage （I-V） with and with- out illumination and capacitance-voltage （C-V） characteristics. It turns out from the I-V curve without illumina- tion that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of 4-5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current （I sc） of 0.16 #A and an open circuit voltage （Voc） of about 10 mV. The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor （MIS） structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This paral- lel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3Pbl3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated.
基金
Project supported by the Hebei Province Natural Science Foundation of China(No.F2014202184)
the Tianjin Natural Science Foundation of China(No.15JCZDJC37800)
