摘要
An LDMOS with nearly rectangular-shape safe operation area （SOA） and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be low- ered down to 74.7 m^2.cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ion- ization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V6s is obtained and snap-back is suppressed as well.
An LDMOS with nearly rectangular-shape safe operation area （SOA） and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be low- ered down to 74.7 m^2.cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ion- ization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V6s is obtained and snap-back is suppressed as well.
基金
Project supported in part by the National Natural Science Foundation of China(No.51237001)
