分子束外延HgCdTe nBn结构红外探测器的理论计算和优化

Simulation and design of HgCdTe nBn detectors grown by MBE

通过2维数值模拟对HgCdTe nBn红外探测器的光电性质进行了研究.理论计算了nBn结构中各层的参数的变化(包含厚度的变化、掺杂浓度的变化以及组分)对器件性能的影响规律.通过优化上述器件结构参数,理论上获得了最优化结构的HgCdTe nBn器件,为获得高性能MBE外延HgCdTe nBn红外探测器提供重要参考.

In this paper,2-D numerical simulation was performed on HgCdTe nBn detectors to study the photoelectric characteristics. We changed the parameters of each layer of HgCdTe nBn structure,including thickness,doping concentration and Cd composition,to study the variation of performance of nBn devices. We also proposed an optimal nBn structure for achieving high performance of HgCdTe nBn Detectors.