摘要
The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to 3×1016 atoms/cm2,followed by Rutherford backscattering spectroscopy(RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of <5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.
The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter（LC-16 type） by implanting of 190-keV Ar ions into Si to 3×10^16 atoms/cm^2,followed by Rutherford backscattering spectroscopy（RBS） and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of 〈5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.
基金
supported by the National Natural Science Foundation of China(Nos.11405117 and 11205116)
International Cooperation Program of the Ministry of Science and Technology of China(No.2015DFR00720)
