CdTe对ZnO棒状纳米材料的电子调控研究

Electronic modulation of ZnO nanorod by the heterojunction with CdTe

氧化锌(ZnO)纳米材料由于独特的光学、电学、磁学等性能具有广泛的应用前景,而半导体的掺杂则能有效地调控ZnO的电子结构。在ZnO棒状纳米材料的合成过程中掺杂适量的碲化镉(CdTe)成功地合成了核壳结构的CdTe/ZnO异质结,X射线粉末衍射(XRD)和透射电子显微镜(TEM)都证明了CdTe的成功包裹,而这一成功包裹减少了CdTe中毒性Cd^(2+)的暴露。同时,电子顺磁共振(EPR)、紫外可见漫反射(DRS)、荧光发光(FL)等一系列测试结果表明,与纯ZnO棒状纳米材料相比,CdTe的掺杂有效地调控了ZnO的电子结构使得ZnO棒状纳米材料的电子密度增大。

Zinc oxide（ZnO）has been widely used due to its unique optical,electrical,magnetic and other properties,and doping semiconductor proves to be an effective way to modulate the electronic properties of ZnO.CdTe core-ZnO shell heterojunction was synthesized successfully by adding CdTe during the synthesis of ZnO nanorod.The characterizations of X-ray diffraction（XRD）and transmission electron microscopy（TEM）both illustrated that CdTe was encapsulated in the lattice of ZnO nanorod,and thus decreased the direct exposure of toxic CdTe.In addition,electron paramagnetic resonance（EPR）,diffuse reflection spectrum（DRS）and fluorescence spectrophotometer（FL）confirmed that the electronic structure of ZnO nanorod was modulated and resulted in the increasing of electronic density of ZnO nanorod.