倍增型量子环长波红外探测器研究

Research on quantum ring long-wave infrared photodetector with a multiplication region

为了提高量子环红外探测器(Quantum Ring Infrared Photodetector,QRIP)的灵敏度,抑制QRIP的暗电流,提出了一种具有倍增区、量子环吸收层以及Al_(0.3)Ga_(0.7)As/In_(0.1)Ga_(0.9)As双势垒结构的倍增型QRIP结构。基于量子环的三维薛定谔方程建立了QRIP的数值模型,并对QRIP的光电特性进行了仿真。仿真结果表明,倍增型QRIP的响应度可以达到40 A/W,归一化探测率可以达到2×10^(10)cm·Hz^(1/2)/W。

To improve the sensitivity of quantum ring infrared photodetector（ QRIP） and restrain the dark current of QRIP,a QRIP with multiplication region,quantum ring absorption layer and Al0.3Ga0.7As/In0.1Ga0.9As double barrier structure is designed. The numerical model of the QRIP is built based on the 3D Schrodinger equation of the quantum ring. The electrical and optical characteristics are simulated. The simulation results show that the responsivity of the detector reaches 40 A/W,and the normalized detectivity reaches 2×10^10cm·Hz^1/2/W.