摘要
Metal hydrazone complex thin films are used as laser patterning materials, and the patterns with a minimum resolution of about 78 nm are successfully obtained by the laser writing setup （λ = 405 nm, NA = 0.9）. The minimum resolution is only about 1/8 of the writing spot size. In the formation of patterns, there is only a single step for forming patterns by the laser heating-induced clear thermal gasification threshold effect without any other development processes such as wet etching. This work provides an effective method for directly achieving nanoscale-resolved pattern structures with diode-based maskless laser writing lithography at visible light wavelengths.
Metal hydrazone complex thin films are used as laser patterning materials, and the patterns with a minimum resolution of about 78 nm are successfully obtained by the laser writing setup （λ = 405 nm, NA = 0.9）. The minimum resolution is only about 1/8 of the writing spot size. In the formation of patterns, there is only a single step for forming patterns by the laser heating-induced clear thermal gasification threshold effect without any other development processes such as wet etching. This work provides an effective method for directly achieving nanoscale-resolved pattern structures with diode-based maskless laser writing lithography at visible light wavelengths.
基金
supported by the National Natural Science Foundation of China under Grant Nos.61137002,61178059,and 51172253
