LED光电器件的性能调控

Performance improvement of LED photoelectric devices

通过对GaN基LED的量子阱垒层进行重新设计,提高了发光二极管(LED)器件的量子效率.并通过理论计算从量子阱的内建电场、载流子分布、电子泄漏、辐射符合效率等方面研究了效率上升的原因。对于LED光电器件,提高辐射复合速率有利于缓解电子泄漏,增加LED的发光功率,缓解LED在大电流下的效率下降。所设计的结构中采用InGaN/GaN作为LED的垒层,减小了由极化引起的静电场,增大了电子和空穴波函数的交叠比,进而增大了辐射复合速率。结果表明在160 mA注入电流下,外量子效率提高了近20%.

Quantum efficiency of light emitting diodes（LED） is improved by redesigning the multiple quantum well of GaN based LED,and the reason for these improvements is researched by theoretical calculation in ways of electric field in quantum well,carrier distribution,electronic leakage and radiation coincidence efficiency.For LED optoelectronic devices,improving the radiative recombination efficiency is benefitial to releasing electron leakage,increasing luminous power of LED,releasing the efficiency drop of LED under high current.The designed construction adopts InGaN/GaN as the barriers of LEDs,which attributes to alleviation of the electrostatic field induced by polarization,increasing the overlap ratio of electrons and holes,and thus increasing the radiation recombination rate.The results show that under 160 mA injection current,the external quantum efficiency is improved by 20%.