抛光介质对镁合金化学机械抛光的影响

Effect of polishing medium in the chemical mechanical polishing of Mg alloy

利用扫描电镜、X射线光电子能谱仪和白光干涉仪研究了碱性抛光液中不同有机溶剂与无机溶剂包括乙二醇、聚乙二醇、去离子水和1%磷酸氢二钠水溶液对镁合金化学机械抛光效果的影响,测试了材料的去除率。结果表明,当采用乙二醇、聚乙二醇等有机溶剂作为抛光液的抛光介质时,能够有效改善镁合金在抛光过程中的点蚀现象,但材料去除率较低;采用去离子水作为抛光介质时,虽然材料去除率较高,但抛光后镁合金表面点蚀现象严重;采用去离子水作为抛光介质并添加1%的缓蚀剂磷酸氢二钠时,能够在保证材料去除率的同时,有效改善镁合金抛光后的表面质量,而且几乎没有点蚀出现。

Scanning electron microscope （SEM）, X- ray photoelectron spectroscopy（XPS） and scanning white light interferometer（SWI） were used to investigate the effect of polishing medium on the chemical mechanical polishing（CMP） of magnesium alloy. And the material removal of magnesium alloy was also calculated. It was found that： less surface pittings were found on the polished surface by the organic polishing medium, such as Ethylene glycol and polyethylene glycol. However the material removal of magnesium alloy was low; in contrast, the material removal of magnesium alloy was high when the demonized water was used as polishing medium, while much surface pittings were found on the finished surface; when the demonized water with 1% disodium hydrogen phosphate was used as polishing medium, the material removal of magne- sium alloy achieved high level and the quality of polished surface was approved with less surface pittings.