2-18 GHz 10 W GaN HEMT非均匀分布式功率放大器

2-18 GHz 10 W GaN HEMT Non-Uniform Distributed Power Amplifier

基于0.25μm GaN双场板（DFP）高电子迁移率晶体管（HEMT）工艺,研制了一款2-18 GHz连续波输出功率大于10 W的功率放大器微波单片集成电路（MMIC）。MMIC中的功率器件采用源场板接地减少强电场引起的功率器件退化,提高了功率器件的击穿电压,并提取了功率器件的可定标大信号器件模型参数;基于非均匀分布式结构,利用ADS软件分别优化MMIC中10个功率器件的最佳栅宽和负载阻抗,MMIC的输入输出匹配阻抗为50Ω;采用电磁场仿真技术优化设计的MMIC芯片尺寸为4.9 mm×2.4 mm。在栅压（Vgs）为-2.4 V、漏压（Vds）为28 V、输入功率（Pin）为30 d Bm的条件下,MMIC在2-18 GHz频带内连续波饱和输出功率大于40 d Bm,功率附加效率大于25%。

A 2-18 GHz power amplifier monolithic microwave integrated circuit （MMIC） with an continuous wave output power over 10 W was developed based on a 0.25 μm GaN dual field plate （DFP） high electron mobility transistor （HEMT） process. A source field plate connected to ground was used in the power device of the MMIC to decrease the degradation aroused by strong electric field, and enhance the breakdown voltage. The scalable large signal model parameters of the power devices were extracted. Based on the non-uniform distributed structure, the optimal gate width and load impe- dance of 10 power devices in the MMIC were optimized respectively. Both the input and output impedance of the MMIC were matched to 50 -. Optimized using electro magnetic simulation, the MMIC size is 4.9 mmx2.4 mm. The MMIC is tested at Vs, of -2.4 V, Vds of 28 V, Pi, of 30 dBm, the output power is more than 40 dBm under continuous wave conditions at 2-18 GHz and the power added efficiency is greater than 25%.