大功率半导体激光二极管阵列加速寿命试验方法

Accelerating Lifetime Test Method of the High Power Semiconductor Laser Diode Array

为了降低大功率半导体激光二极管阵列的寿命评估成本,提出了一种基于威布尔分布,以恒定电流作为加速应力条件的试验方法进行了试验验证。在经过筛选试验剔除不合格品后,共有三组样品在25,27和30 A的电流应力下进行加速寿命试验。样品的寿终判据为输出功率退化达到10%。对样品失效原因进行了分析,记录试验数据并绘制曲线。试验数据分别采用图估计法和数值计算法进行处理。经过对形状参数、特征寿命和平均寿命等参数的对比分析,试验结果验证了该加速寿命试验方法的有效性。

In order to reduce the cost of lifetime assessment of high power semiconductor laser diode array, a method of accelerating life time test with the constant current stress based on Weibull distributed model was presented and verified by the experiment. Screening test was conducted to remove defective samples. After that, three groups of samples under three different current stresses of 25, 27 and 30 A were used in the experiment. The end-of-life criteria of samples is that the output power deteriorate to 10%. The failure reason of the failed samples were analyzed. Experiment data were processed and shown in the form of curves. Experiment data were processed by the graphical parameter estimation method and numerical method respectively. After comparative analysis of the shape parameter, characteristic lifetime and average lifetime, the results show the effectiveness of the accelerating lifetime test method.