In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究

n-i-p Type InGaN Solar Cells with Graded In Composition

为了优化InGaN太阳能电池结构并有效地指导实际电池的制备,研究了n-i-p(p层在下)In组分梯度渐变结构的InGaN太阳能电池的性能特征。通过APSYS软件模拟计算,对比采用p-i-n渐变结构(p层在上)和n-i-p渐变结构(p层在下)的InGaN太阳能电池的器件性能。结果表明,采用n-i-p渐变结构的InGaN电池,i-InGaN层在低In组分下没有明显的优势,而在高In组分下的器件性能较好。在In组分为0.62时,转换效率最高达到8.48%。分析表明,p层在下的n-i-p渐变结构使得InGaN电池的极化电场与耗尽区的内建电场方向一致,有利于载流子的输运。采用n-i-p渐变结构有利于制备高性能的InGaN太阳能电池。

In order to optimize InGaN solar cell（ SC） structures and effectively guide the preparation,the properties of n-i-p InGaN SC structures with graded In composition were investigated.Through APSYS simulation software,the performances of p-i-n and n-i-p SC structures with graded In composition were compared. It is found that n-i-p structures don＇t have obvious advantage in the device performance over p-i-n ones when In composition of i-InGaN layer is low,which yet presents better performance with higher In composition. When In composition is 0. 62,the SC conversion efficiency reaches 8. 48%. The further analysis indicates that the polarization electric field in InGaN layer has the same directions with the built-in one in the depletion region for the case of n-i-p SC structures,which is very beneficial for carrier transport. The n-i-p SC structures with graded In composition are proven to be beneficial for high performance InGaN SCs.