衬底温度对TiOPc光敏有机场效应管的影响

Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine

制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管,对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明,随着衬底温度(T_(sub))的增加,器件载流子迁移率(μ)、光暗电流比(P)和光响应度(R)先增加后减小,在T_(sub)=140℃时达到最大。T_(sub)=140℃的ITO衬底器件,在波长808 nm、光功率密度190 m W·cm^(-2)的近红外光照下,最大载流子迁移率达到1.35×10^(-2)cm^2·V^(-1)·s^(-1),最大光暗电流比为250,栅压为-50 V时的最大光响应度为1.51 m A/W。

Organic field-effect transistors（ OFETs） based on titanyl-phthalocyanine（ TiOPc） were fabricated,and the temperature of ITO substrate（ T_（sub）） was optimized. The results show that the carrier mobility（ μ）,photosensitivity（ P）,and photoresponsivity（ R） increase firstly,and then decrease with the increasing of T_（sub）. When T_（sub）= 140 ℃,OFETs exhibit a maximum carrier mobility of 1. 35 × 10^（-2）cm^2·V^（-1）·s^（-1）,a maximum photosensitivity of 250,and a maximum photoresponsivity of 1. 51 m A / W under the illumination by a laser diode with a wavelength of 808 nm and power density of 190 m W·cm^（-2）.